Silicon carbide (SIC) is a new generation of "energy-saving components" that have attracted much attention in the industry because of their advantages such as low power loss, high withstand voltage resistance, and smaller size, which can make machines energy-saving, miniaturized, and efficient. With the continuous development of society, the third generation of semiconductor materials will be widely used in home appliances and consumer electronics, new energy vehicles, industry and other high-tech fields, with broad market prospects, and the third generation of semiconductor era represented by silicon carbide and gallium oxide is also coming
6 inch SiC conductive type substrate ingot specification |
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Project |
Performance |
Parameter |
Crystal parameters |
Surface crystal orientation Surface orientation |
4.0° toward [11-20]± 0.5° |
4H crystal form area areas |
100% |
|
Edge polycrystal |
Without |
|
Mechanical parameters |
Diameter(mm) |
150±0.1 |
Primary flat orientation |
<11-20>±5.0° |
|
Primary flat length(mm) |
47.5±1.5 |
|
Electrical parameters |
Resistivity(2 · cm) |
0.01-0.03 |
Dopant |
N-type nitrogen doping |
|
Defect parameter |
Microtubule density(a/cm2) Micropipe Density |
≤0.5 |
Base plane dislocationBPD(个/cm2) |
≤7000 |
|
Surface quality |
Cracks |
Without |