6 inch SiC conductive type substrate ingot

Silicon carbide (SIC) is a new generation of "energy-saving components" that have attracted much attention in the industry because of their advantages such as low power loss, high withstand voltage resistance, and smaller size, which can make machines energy-saving, miniaturized, and efficient. With the continuous development of society, the third generation of semiconductor materials will be widely used in home appliances and consumer electronics, new energy vehicles, industry and other high-tech fields, with broad market prospects, and the third generation of semiconductor era represented by silicon carbide and gallium oxide is also coming

Parameter

6 inch SiC conductive type substrate ingot specification

Project

Performance

Parameter

 

Crystal parameters

 

Surface crystal orientation

Surface orientation

4.0°  toward [11-20]± 0.5°

 

4H crystal form area

areas

 

100%

Edge polycrystal

Without

Mechanical parameters

Diameter(mm)

150±0.1

Primary flat orientation

<11-20>±5.0°

Primary flat length(mm)

47.5±1.5

Electrical parameters

Resistivity(2 · cm)

0.01-0.03

Dopant

N-type nitrogen doping

Defect parameter

Microtubule density(a/cm2)

Micropipe Density

≤0.5

Base plane dislocationBPD(个/cm2)

≤7000

Surface quality

Cracks

Without

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