Specifications： 6 inches
Type： SiC conductive substrate single wafer
Superiority： It solves key technologies such as high-purity silicon carbide powder purification technology and 6-inch silicon carbide single crystal preparation
Territory： New energy automotive industry applications, charging pile industry applications, distributed energy industry applications, rail transit, wind power generation, industrial motors, consumer electronics and other fields

Specifications： 6 inches
Type： SiC conductive substrate ingot
Superiority： It has the advantages of large band gap, high thermal conductivity, high breakdown electric field, high intrinsic temperature, good anti-radiation chemical stability, and high electron saturation drift speed.
Territory： New energy automotive industry applications, charging pile industry applications, distributed energy industry applications, rail transit, wind power generation, industrial motors, consumer electronics and other fields