Product display
  • Substrate ingot
  • Substrate wafer
  • 6 inch SiC conductive type substrate single wafer
    • Specification:6 inches
    • Type:SiC conductive substrate single wafer
    • Advantage:It solves key technologies such as high-purity silicon carbide powder purification technology and 6-inch silicon carbide single crystal preparation
    • Application field:New energy automotive industry applications, charging pile industry applications, distributed energy industry applications, rail transit, wind power generation, industrial motors, consumer electronics and other fields
    6 inch SiC conductive type substrate ingot
    • Specification:6 inches
    • Type:SiC conductive substrate ingot
    • Advantage:It has the advantages of large band gap, high thermal conductivity, high breakdown electric field, high intrinsic temperature, good anti-radiation chemical stability, and high electron saturation drift speed.
    • Application field:New energy automotive industry applications, charging pile industry applications, distributed energy industry applications, rail transit, wind power generation, industrial motors, consumer electronics and other fields
    Application field
    News
    Home Product News Contact