Total investment of 400 million yuan!
Hefei Century Gold Core annual output of 30,000 pieces of 6-inch silicon carbide single crystal substrate project into production!
On September 9, 2022, the production ceremony of Hefei Century Goldcore Semiconductor Co., LTD. 's annual output of 30,000 pieces of 6-inch silicon carbide single crystal substrate was held in Hefei High-tech Zone Integrated Circuit Industrial Park. The smooth production of the project marked the upgrade of the company's self-controllable ability at the source of the industrial chain and the company's industrialization process entered a new chapter. It is reported that century gold core products have achieved batch delivery to downstream customers.

Figure 1 Site of the start-up ceremony
Witnessed by guests and journalists, Yuan Fei, member of the Standing Committee of Hefei Municipal Committee, Wang Huayu, Deputy Secretary-General of Hefei Municipal People's Government, Wu Wenli, Director of Hefei Investment Promotion Bureau, Lv Changfu, member of the Party Working Committee and deputy director of the Management Committee of High-tech Zone, Yong Fengshan, Chairman of Hefei Industrial Investment Group, Li Baiquan, Chairman of Century Golden, Sun Yuwang, Partner and General Manager of SMIC Juyuan, Zhao Jing, deputy secretary general of the third generation semiconductor Industry Technology Innovation Strategic Alliance, and Xia Shunli, general manager of New energy of Jiangqi Group, held down the start button and lit up the production line starting platform for the launch ceremony. The successful holding of this ceremony marked the official operation of Hefei Century Gold Core's annual output of 30,000 pieces of 6-inch silicon carbide single crystal substrate project. At the launch ceremony, Li Baiquan, chairman of Century Golden, expressed his heartfelt thanks to Hefei Municipal Party Committee, municipal government, high-tech zone and urban functional departments, company shareholders and all project builders who care and support the development of Century Golden Core 6-inch silicon carbide single crystal substrate project. He said that the smooth production of the project indicates the success of the whole industry chain of Century Gold Core. In the future, "Century Gold Core" will continue to cooperate with Hefei, in the field of silicon carbide in-depth cultivation, while maintaining its own sustainable development, to assume more social responsibilities, for the country,
Create greater social and economic benefits for shareholders!

Figure 2 Li Baiquan, chairman of Century Golden, delivers a speech
Zhao Jing, deputy secretary general of the Strategic Alliance of technology innovation of the third generation semiconductor industry, expressed warm congratulations on the successful production of the Century Gold Core 6-inch silicon carbide single crystal substrate project at the ceremony, and sincerely hoped that the third generation semiconductor in Hefei, a unique land of innovation, to find a unique industrial ecological road. The third generation semiconductor Alliance will further take the market as the traction and rely on the backbone enterprises such as Century Gold Core to continue to promote the collaborative innovation and cluster development of the industry.

Figure 3 Speech by Zhao Jing, Deputy Secretary General of the Strategic Alliance of Technology Innovation of the third Generation semiconductor Industry
Lyu Changfu, member of the Party Working Committee and deputy director of the Management Committee of Hefei High-tech Zone, said that Hefei Century Gold Core is an excellent semiconductor enterprise in China, which focuses on introducing the whole industrial chain of the third generation semiconductor silicon carbide in the high-tech zone. The High-tech Zone will unswervingly do a good job in project service and support, escort the development of Century Gold Core and create a good business environment for industrial development.

It is reported that the project is the century golden light joint Hefei City, high-tech zone, Hefei Industrial Investment Group to jointly build the silicon carbide power semiconductor industry chain phase I project, is one of the core links of the silicon carbide industry chain, the smooth production of the project, can effectively alleviate the domestic large diameter conductive silicon carbide single crystal substrate supply shortage situation, for the downstream chip cost reduction will play a positive role, It is of great significance to enhance the comprehensive competitiveness of the downstream and upper silicon carbide manufacturers. With a total investment of 405 million yuan, the project covers an area of 7200 square meters. It took 11 months to complete the project construction into production and operation, fully demonstrating the "determination of Hefei" and "Golden core speed". The operation of the project is another milestone on the road of the company's development, which will play a certain role in promoting the development of new energy industry in Hefei. It is also another major achievement achieved by the Hefei Municipal government in focusing on the layout of integrated circuit industry.

 
Figure 5. Silicon carbide single crystal substrate growth furnace
Finally, the leaders, guests and media reporters who attended the ceremony visited the silicon carbide single crystal substrate production line. Based on the background of new power semiconductor devices urgently needed in the energy industry, this project has solved the key technical problems affecting the quality of single crystal, such as raw material purification and preparation, single crystal growth and single crystal substrate processing, by studying and analyzing the formation, development, distribution and interaction mechanism of various defects in silicon carbide single crystal substrate. To explore a new way that can effectively reduce the key defect density of large size single crystal and improve the quality of single crystal, and play a leading and demonstration role in the market application of new power electronic materials and devices in China.

Figure 6 Production line visit and explanation
In the future, the company will continue to adhere to the "innovative and pragmatic" attitude, seize the opportunity of domestic development of semiconductor industry, make continuous efforts to improve in the aspects of technology innovation, product development and market application, and continue to make new achievements, to help Hefei semiconductor industry achieve leapfrog development!