6 inch SiC conductive type substrate single wafer
Specifications: 6 inches
Type: SiC conductive substrate single wafer
Superiority: It solves key technologies such as high-purity silicon carbide powder purification technology and 6-inch silicon carbide single crystal preparation
Territory: New energy automotive industry applications, charging pile industry applications, distributed energy industry applications, rail transit, wind power generation, industrial motors, consumer electronics and other fields
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